Barrier in gate stack for improved gate dielectric integrity

ABSTRACT

A barrier layer comprising silicon mixed with an impurity is disclosed for protection of gate dielectrics in integrated transistors. In particular, the barrier layer comprises silicon incorporating nitrogen. The nitrogen can be incorporated into an upper portion of the gate polysilicon during deposition, or a silicon layer doped with nitrogen after silicon deposition. The layer is of particular utility in conjunction with CVD tungsten silicide straps.

REFERENCE TO RELATED APPLICATION

This application is a continuation of application Ser. No. 09/894,070,filed Jun. 28, 2001 now U.S. Pat. No. 6,562,730, which is a divisionalof application Ser. No. 09/178,306, filed Oct. 23, 1998, issued Apr. 16,2002 as U.S. Pat. No. 6,373,114, both owned by the assignee of record,Micron Technology, Inc.

FIELD OF THE INVENTION

The present invention relates to transistor gate stacks in integratedcircuits, and more particularly to preventing degradation of gatedielectrics during processing.

BACKGROUND OF THE INVENTION

In contemporary fabrication of integrated circuits, themetal-oxide-semiconductor field-effect transistor (MOSFET) has long beenthe most important device. Conductive gate material is formed over agate dielectric (typically silicon dioxide), which in turn overlies asemiconductor substrate (typically single-crystal silicon).

The use of doped polycrystalline silicon (polysilicon, or poly forshort) for MOSFET gate electrodes has entailed many advantages overpurely metal gates, such as aluminum. Several advantages derive from thehigh melting point of polysilicon as compared to aluminum. Aluminumgates, for example, would have to be formed after high temperaturedopant implantation and drive steps. Aluminum deposited aftersource/drain formation could be misaligned from the MOSFET channel,leading to parasitic gate/drain or gate/source overlap capacitance. Bycomparison, polysilicon gates can serve as a mask for doping source anddrain regions, creating channels which are self-aligned to the gate.Additionally, unlike metals deposited directly over gate oxide,polysilicon will not react with the gate oxide, nor does it causeexcessive dopant depletion. Because polysilicon gates can be formedprior to many high temperature steps, including glass reflow, thepolysilicon deposited for the gate electrode may also function as aninterconnect. For example, dynamic random access memory (DRAM) wordlines may be etched from the polysilicon layer deposited for the gates(often referred to in the industry as “poly-1”).

Unfortunately, polysilicon resistivity is considerably higher than thatof aluminum or other metals. Additionally, efforts to increase circuitdensity by scaling down device dimensions lead to polysilicon lines ofdecreasing width, which in turn leaves a small cross-sectional line areathrough which to conduct current. High polysilicon resistivity, combinedwith small line width, results in a high overall interconnectresistance, entailing greater power consumption, long propagation delaysand slower access speeds. As integrated circuits are scaled down, accessspeed becomes a critical issue so methods of reducing ofgate/interconnect resistivity are required.

In pursuit of lower overall gate resistance, highly conductive layers(e.g., metal, metal silicide, and/or metal nitride) have beenimplemented over the gate polysilicon, thus lowering the overallresistivity of the interconnect lines while retaining the gate integrityprovided by polysilicon. Typically, a layer of metal silicide (such asWSi_(x) or TiSi_(x)) is formed over the polysilicon. Such assilicide/polysilicon composite structure is often referred to as a“polycide.” A metal layer may overlie the metal silicide, reducingresistivity even further, though many prior art gate structures lack thepure metal layer. Alternatively, a metal layer may also be depositeddirectly over the polysilicon, without the intervening metal silicide,depending upon stress and adhesion factors. A dielectric capping layergenerally overlies the conductive layers of the gate stack.

FIG. 1 illustrates a typical gate stack 10 overlying a semiconductorsubstrate 20 prior to patterning. The illustrated stack includes aprotective cap layer 12 (comprising, e.g., silicon nitride), a silicidelayer (e.g., WSi_(x)), and a conductively doped polysilicon layer 16,all overlying a gate oxide 18 which has been grown out of a singlecrystal silicon substrate 20. After the layers which make up the gatestack 10 have been formed, gate structures must be patterned inaccordance with an integrated circuit design (e.g., a dynamic randomaccess memory, or DRAM, array).

FIG. 2 illustrates the result of patterning. After a resist mask 24 isformed by standard photolithographic processes, the stack 10 is etchedthrough, thus producing a gate electrode 26 comprised of patterned gatepolysilicon 28, silicide 30, and dielectric cap 32 straps, as shown. Ingeneral, anisotropic etches are utilized to create vertical profiles ongate structures 26, although the particulars may vary depending upon thestack materials. Typical etch chemistries include fluorine- orchlorine-based plasmas.

A high quality gate insulator is required for the reliable operation ofthe MOSFET device and of the circuit employing the MOSFET.Susceptibility to hot carrier effects and consequent charge trapping,high defect densities, silicon-oxide interface states, pinholes andoxide thinning can all cause punch-through or tunneling current leakage.In turn, junction leakage results in increased threshold voltage andunreliable circuit operation. For a variety of reasons, the processesinvolved in depositing the various gate stack layers and in patterningthe gates, tends to degrade the quality of the gate oxide 18 underlyingthe patterned gate 26. For example, exposure to fluorine ions can damageoxide bonds within the gate oxide 18, creating charge trap sites. Asfluorine and other contaminants have a tendency to diffuse throughpolysilicon, such gate oxide damage can penetrate even below thepatterned gate stack 26. As a result, the gate dielectric 18 must eitherbe made thicker (entailing greater power consumption) or early breakdownwill occur.

Accordingly, a need exists for gate fabrication processes and structureswhich permit low overall resistance at the gate level while maintaininghigh quality gate dielectric compositions.

SUMMARY OF THE INVENTION

In accordance with one aspect of the present invention, a gate stack inan integrated transistor includes a gate dielectric overlying asemiconductor substrate, a first silicon layer overlying the gatedielectric, and a conductive layer directly overlying silicon layer. Anitrogen-containing second silicon layer is interposed between the firstsilicon layer and the conductive layer.

In accordance with another aspect of the present invention, anintegrated circuit includes a semiconductor substrate, a dielectriclayer overlying the substrate, a conductive silicon layer overlying thedielectric layer, and a metal silicide overlying the silicon layer. Anon-metallic barrier layer is interposed between the metal silicidelayer and the silicon layer. While the barrier layer electricallyconnects the metal silicide and the silicon layer, it also inhibitsdiffusion of impurities between those layers.

In accordance with another aspect of the present invention, a gate stackin an integrated circuit includes a polysilicon gate layer and asilicon-rich silicon nitride layer directly overlying the gate layer.

In accordance with another aspect of the present invention, anintegrated circuit has a gate stack, including a conductive silicon gatelayer, a silicon-based conductive barrier layer directly overlying thegate layer, and a metallic strap directly overlying the barrier layer.

In accordance with another aspect of the present invention, a processfor forming an integrated circuit on a semiconductor substrate includesforming a silicon layer over the substrate. Nitrogen is incorporatedinto an upper portion of the silicon layer, such that the upper portionincludes nitrogen to silicon in a ratio of less than 4:3. A metalliclayer is deposited over the silicon layer by chemical vapor deposition.

In accordance with another aspect of the present invention, a method offorming a gate stack for an integrated transistor includes forming agate silicon layer over a gate channel region in a semiconductorsubstrate. An upper portion of the gate silicon is then implanted with anon-conducting impurity.

In accordance with another aspect of the present invention, a method offorming a gate stack over a semiconductor substrate includes forming agate dielectric directly over the substrate. A silicon source gas isflowed over the gate dielectric, thereby forming a first silicon layerdirectly over the gate dielectric. While continuing to flow the siliconsource gas, a nitrogen source gas is flowed, thereby forming a secondsilicon layer directly over the first silicon layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-2 are partial, cross-sectional representations of a partiallyfabricated integrated circuit, generally illustrating conventional gatefabrication.

FIGS. 3-6 are partial, cross-sectional representations of a partiallyfabricated integrated circuit, generally illustrating a method offabricating a gate stack in accordance with a preferred embodiment ofthe present invention.

FIG. 7 is a cross-sectional view of a gate structure, constructed inaccordance with the preferred embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENT

The present invention provides a method of preventing degradation oftransistor gates in integrated circuits. Although the preferredembodiments are discussed in terms of DRAM gate electrodes and wordlines, those having skill in the art of integrated circuit fabricationmay find application to the present invention for electrodes orconducting lines in other contexts. Furthermore, while the preferredgate dielectric comprises silicon oxide, it will be understood that thepresent invention can aid in protecting the integrity of gate stackshaving other gate dielectric materials, such as silicon nitride, amongothers.

As discussed in the “Background” section above, gate electrodes oftencomprise conductively doped polysilicon strapped with one or more highlyconductive layers to lower total interconnect resistance. The conductivestraps generally contain metal, such as pure metal, metal silicide, ormetal nitride layers in various combinations. Refractory metals, such astantalum (Ta), titanium (Ti) and tungsten (W), can form stableconductive silicide or nitrides and are thus of particular utility inlow resistance gate interconnects. Other exemplary metals includemolybdenum (Mo), cobalt (Co), magnesium (Mg), nickel (Ni) and copper(Cu). Platinum (Pt), silver (Ag) and paladium (Pd) are also quitecommonly used for wiring integrated circuits. Various combinations orsequences among gate stack layers are chosen to maximize adhesion,conductivity, and minimize stress within the composite gate stack. Whileinterconnect conduction may mostly occur in highly conductive upperlayers, those upper layers must remain in electrical communication withthe doped polysilicon layer, particularly at points where thepolysilicon must serve as a gate for switching a transistor within thesilicon substrate.

FIG. 3 illustrates a semiconductor substrate 50, comprising a siliconwafer in accordance with contemporary integrated circuit design. It willbe understood by one of skill in the art of semiconductor processing,however, that the “substrate” in alternative embodiments may compriseother forms of semiconductor layers which include active or operableportions of semiconductor devices. Active areas to be formed within thesubstrate 50 are isolated by field oxide 52 grown through a mask, thoughtrench isolation can also be used in alternative embodiments. A gatedielectric 54 is then formed over the remainder of the substrate 50.Preferably, the gate dielectric 54 comprises a high quality thermalsilicon dioxide, grown by exposing the silicon substrate 50 to anoxidizing environment at high temperatures. It will be readilyrecognized by one of skill in the art, however, that the presentinvention will have application for alternative gate dielectrics, suchas silicon nitride. In accordance with the preferred embodiment, thegate dielectric 54 should have a thickness of less than about 200 Å,most preferably about 50 Å.

Also shown in FIG. 3, a first or partial silicon layer 56 is then formedover the gate dielectric layer 54. The thickness of the partial siliconlayer 56 depends upon the operational and design rules for theparticular integrated circuit and upon the constitution of other layersin the stack, as will be understood by one of skill in integratedcircuit fabrication. The partial silicon layer 56 can be between about200 Å and 3,000 Å thick. The preferred stack materials (including abarrier layer described below) enable thinner gate silicon layers thanhave conventionally been practicable. Accordingly, the illustratedpartial silicon layer is preferably less than about 500 Å, and morepreferably between about 300 Å and 400 Å. The silicon layer 56 can beformed by conventional chemical vapor deposition (“CVD”) of silicon andcan be in situ doped for conductivity. It will be understood that thepreferred polysilicon 56 can be replaced with amorphous silicon.

Referring now to FIG. 4, a non-metallic and in particular silicon-basedbarrier film 58 is formed over the partial silicon layer 56. The barrierfilm 58 can also be considered a second silicon layer, or the upper partof the gate silicon layer. As with the partial silicon layer 56, thebarrier film 58 may comprise polysilicon or amorphous silicon, and maybe in situ doped for conductivity. Additionally, however, the barrierfilm 58 includes an impurity which reduces contaminant diffusion throughthe silicon, while maintaining sufficient electrical connection betweenthe partial silicon layer 56 and layers to be deposited over the barrierfilm 58.

Preferably, the impurity within the barrier film 58 comprises nitrogenin a ratio to silicon which is insufficient to produce stoichiometricsilicon nitride (Si₃N₄). In particular, the ratio of nitrogen to siliconin the barrier film 58 is less than 4:3, preferably between about 4:10and 4:3.5, particularly 4:5 to 4:3.5 and more preferably between about4:5 and 4:4. It will be understood by one of skill in the art that thenitrogen content in this barrier film 58 can be optimized throughroutine experimentation so that the overlying metallic layers andunderlying partial silicon layer 56 are electrically connected while thebarrier film 58 effectively minimizes diffusion of contaminants throughto the gate dielectric 54. The thickness of this layer also depends upondesign and operational rules, but can in general range from 50 Å to 800Å, preferably between about 100 Å and 500 Å, and most preferably lessthan about 200 Å.

In accordance with one embodiment, the preferred nitrogen-doped siliconfilm 58 is formed in situ following the deposition of the partialsilicon layer 56. A nitrogen source gas is introduced into the gas flowduring silicon deposition. An exemplary process includes flowing silane(SiH₄) and phosphine or arsine for a sufficient time to produce thepartial silicon layer 56 of the desired thickness. The nitrogen sourcegas, preferably comprising ammonia (NH₃), is then introduced into thegas flow. The skilled artisan can readily determine, through routineexperimentation, an appropriate volumetric ratio between the nitrogensource gas and the silicon source gas such as will achieve the optimallevel of nitrogen content, as described above, during the nitridedeposition phase. With ammonia and silane, the volumetric ratio ispreferably between about 3:1 and 1:10. For example, 100 sccm of thenitrogen source gas can be introduced into a previously flowing 250 sccmof silane.

Most preferably, this nitride deposition is followed by an anneal in anitrogen environment, such as an RTP anneal at 1,000° C. for about 30seconds. The nitrogen environment is also preferably ammonia gas, thoughother nitrogenous gases can also be used.

In accordance with another embodiment, the barrier film 58 can befabricated by completing deposition of silicon to the desired overallsilicon thickness in the same manner as the deposition of the partialsilicon film 56. The upper portion of the silicon can then be implantedwith a nitrogen ion implantation process. Such a nitrogen ionimplantation is described in the context of nitrogen doping a substratebelow the gate corner in U.S. patent application Ser. No. 08/871,210,filed Jun. 9, 1997. The disclosure of the implantation in the '210application is incorporated by reference herein. It will be understoodthat a range of implantation energies results in a depth distributionfor the implanted nitrogen. The skilled artisan can readily determinethe doping concentration and implant energies for the nitrogenimplantation, in view of the present disclosure and the disclosure ofthe '210 application, which will result in the desired distribution ofnitrogen through the silicon of the barrier film 58. The amount ofnitrogen doping preferably ranges from about 5×10¹³ to 1×10¹⁶ atoms/cm².A preferred implantation energy is in the range of about 10 keV to 100keV.

Referring now to FIG. 5, a metallic layer 60 is formed over the barrierfilm 58. The metallic layer 60 can comprise any of a number of highlyconductive materials containing metals, and particularly materials whichcan be deposited by CVD. In the illustrated embodiment, the metalliclayer 60 comprises a silicide, preferably tungsten silicide (WSi_(x)).Such silicide can be formed by depositing a metal layer and reacting themetal with the underlying silicon. Preferably, however, the metalliclayer 60 is formed by CVD according to the following formula:

WF ₆ +SiH ₄ →WSi _(x) +F ₂ +H ₂  1

Alternatively, other silicon source gases (such as disilane, trisilane,di-chlorosilane, etc.) can be used in place of silane, and similarlyother metal sources (such as titanium tetrachloride, etc.) can be usedin the deposition process. Tungsten silicide formed by the above-notedpreferred CVD process tends to incorporate fluorine into the film.Similarly, many CVD processes result in hydrogen residue within thedeposited film. Furthermore, post-deposition high-temperature steps tendto cause diffusion of such contaminants through the underlying siliconlayer in conventional gate stacks. Fluorine, for example, easilydiffuses down through grain boundaries of polysilicon.

Diffusion of contaminants such as fluorine often takes place during apost-deposition anneal step which is conventionally performed afterinitial formation of a suicide. This anneal is performed to convert thedeposited silicide to a lower resistance phase through grain growth andre-orientation during the anneal. The anneal typically takes place atbetween about 600° C. and 900° C. for about 25 minutes. Not only doesfluorine tend to diffuse from the silicide into the gate poly duringthis anneal, but the re-orientation and grain growth tends to introducestress and attendant defects in on the thin gate oxide.

In contrast, the preferred barrier film 58 of the present inventiontends to slow down contaminant diffusion through the silicon layers 58,56, such that contaminants are not allowed to reach and degrade the gatedielectric 54. Additionally, the barrier layer 58 prevents silicidegrain penetration during the silicide reorientation anneal, due to theslow diffusivity of silicon within the barrier layer 58. Accordingly,the barrier film 58 also reduces the amount of stress created by theanneal. Furthermore, the use of the barrier film 58 enables use ofthinner gate silicon (i.e., partial silicon layer 56).

As shown in FIG. 6, the formation of the metal layer 60 is followed byformation of an insulating cap layer 62, typically comprising silicondioxide or silicon nitride.

After the layers have been formed over the silicon substrate 50, thelayers are masked (using known photolithographic techniques) withphotoresist 64, and etched through to expose the gate dielectric 54 overtransistor source and drain regions. These regions are formed by laterdoping the substrate to either side of the gate defined by the patternresist 64.

Since the gate length represents the critical channel length of theintegrated transistor, the electrode stack should be etchedanisotropically to produce vertical sidewalls, thus faithfullyreproducing the dimension on the photoresist mask (about 0.3 micron fora 256 Mbit DRAM circuit). The particular etches used will vary withdifferent metals, silicides, or nitrides. U.S. Pat. No. 5,094,712,issued to Becker, et al. and assigned to the assignee of the presentinvention, for example, discloses a one-chamber, in situ etched processfor etching to an insulating cap oxide/silicide/poly stack. Thedisclosure of this patent is hereby incorporated by reference.

Referring now to FIG. 7, a patterned gate structure 66 is shown over thesubstrate 50. After the gate stack has been etched through, sidewallspacers 68 are formed by conventional blanket deposition and(anisotropic) spacer etch. The spacer 68 typically comprises the samematerial as the insulating cap 62 (i.e., silicon dioxide or siliconnitride), such that the cap 62 and spacers 68 can protect the gateduring selective etches at a later point in the process, as will berecognized by one of skill in the art. The circuit can then be completedaccording to design and operational rules.

The present application thus discloses a method and structure forprotecting the gate dielectric 54 from degradation due to stress orcontamination diffusion during high-temperature steps. This protectionis particularly valuable during post-silicide deposition anneal, whichconverts a silicide to a lower resistivity phase. Without the barrierfilm 58 of the present disclosure, contaminants such as fluorine (orother byproducts of metal or metallic layer deposition) might bepermitted to diffuse down to the gate dielectric 54. Furthermore, there-orientation and growth of grains within the silicide during thepost-deposition anneal would cause stress on the gate dielectric 54 inthe absence of the barrier film 58. Such stress can also cause gatedielectric defects, which in turn lead to current leakage and devicefailure.

Furthermore, the barrier film of the present disclosure is easilyintegrated into existing processes, and can be conducted in situ withinthe same chamber as the gate poly deposition. Advantageously, thepreferred barrier film 58 (nitrogen-doped polysilicon) allows themetallic layer 60 to remain electrically connected to the gate poly 56while effectively blocking contaminant diffusion therebetween. Thebarrier film 58 thus does not interfere with the interconnect function(served primarily by the metallic layer 60) or the gate switchingfunction (served primarily by gate poly 56).

Although the foregoing invention has been described in terms of certainpreferred embodiments, other embodiments will become apparent to thoseof ordinary skill in the art, in view of the disclosure herein.Accordingly, the present invention is not intended to be limited by therecitation of the preferred embodiments, but is instead intended to bedefined solely by reference to the appended claims.

We claim:
 1. A process for forming an integrated circuit on asemiconductor substrate, the process comprising: forming a silicon layerover the substrate; incorporating nitrogen into an upper portion of thesilicon layer, the upper portion having a ratio of nitrogen to siliconless than about 4:3.5; and depositing a metallic layer over the siliconlayer by chemical vapor deposition.
 2. The process of claim 1, whereindepositing the metallic layer comprises flowing a metal halide.
 3. Theprocess of claim 2, wherein the metal halide comprises tungstenfluoride.
 4. The process of claim 3, wherein the metallic layercomprises a tungsten silicide.
 5. The process of claim 1, whereinincorporating nitrogen into the upper portion of the silicon layercomprises introducing a nitrogen source gas while depositing the upperportion of the silicon layer.
 6. The process of claim 5, wherein thenitrogen source gas comprises ammonia.
 7. The process of claim 1,wherein incorporating nitrogen into the upper portion of the siliconlayer comprises annealing the silicon layer in a nitrogen environment.8. The process of claim 1, wherein the incorporating nitrogen into theupper portion of the silicon layer comprises implanting nitrogen ionsinto an upper surface of the silicon layer.
 9. The process of claim 1,wherein the ratio of nitrogen to silicon is between about 4:10 and4:3.5.
 10. A method of forming a gate stack for an integratedtransistor, the method comprising: forming a gate silicon layer over agate channel region in a semiconductor substrate; and implanting anon-conducting impurity in an upper portion of the gate silicon layersuch that the upper portion of the gate silicon layer has a ratio ofnon-conducting impurity to silicon less than about 4:3.5.
 11. The methodof claim 10, further comprising depositing a metallic layer over theupper portion of the gate silicon layer.
 12. The method of claim 11,wherein depositing the metallic layer comprises flowing a metal halide.13. The method of claim 12, wherein the metal halide comprises tungstenfluoride.
 14. The method of claim 13, wherein the metallic layercomprises a tungsten silicide.
 15. The method of claim 10, wherein thenon-conducting impurity comprises nitrogen.
 16. The method of claim 15,wherein implanting comprises a dose of between about 5×10¹³ atoms/cm²and 1×10¹⁶ atoms/cm² at an energy of between about 10 keV and 100 keV.17. The method of claim 10, wherein the ratio of non-conducting impurityto silicon is between about 4:5 and 4:3.5.
 18. A method of forming agate stack over a semiconductor substrate, the method comprising:forming a gate dielectric directly over the substrate; flowing a siliconsource gas over the gate dielectric, thereby forming a first siliconlayer directly over the gate dielectric; and flowing a nitrogen sourcegas while continuing to flow the silicon source gas, thereby forming asecond silicon layer directly over the first silicon, wherein avolumetric ratio between the nitrogen source gas and the silicon sourcegas is selected between about 3:1 and 1:10 to form a barrier tofluorine.
 19. The method of claim 18, wherein the silicon source gas issilane and the nitrogen source gas is ammonia.
 20. The method of claim18, further comprising subsequent tungsten silicide deposition bychemical vapor deposition, including flowing a tungsten halideprecursor.